sqp120n06-06 www.vishay.com vishay siliconix s15-1876-rev. b, 10-aug-15 1 document number: 62853 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 60 v (d-s) 175 c mosfet features ? trenchfet ? power mosfet ? package with low thermal resistance ? aec-q101 qualified d ? 100 % r g and uis tested ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr4 material). d. parametric verification ongoing. product summary v ds (v) 60 r ds(on) ( ) at v gs = 10 v 0.006 i d (a) 119 configuration single package to-220 to-220ab top view s s g d g s n-channel mosfet absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 119 a t c = 125 c 68 continuous source curre nt (diode conduction) a i s 120 pulsed drain current b i dm 480 single pulse avalanche current l = 0.1 mh i as 65 single pulse avalanche energy e as 211 mj maximum power dissipation b t c = 25 c p d 175 w t c = 125 c 56 operating junction and storage temperature range t j , t stg -55 to +175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 40 c/w junction-to-case (drain) r thjc 0.88
sqp120n06-06 www.vishay.com vishay siliconix s15-1876-rev. b, 10-aug-15 2 document number: 62853 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 60 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 3.0 3.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 60 v - - 1 a v gs = 0 v v ds = 60 v, t j = 125 c - - 50 v gs = 0 v v ds = 60 v, t j = 175 c - - 250 on-state drain current a i d(on) v gs = 10 v v ds 5 v 120 - - a drain-source on-s tate resistance a r ds(on) v gs = 10 v i d = 30 a - 0.0045 0.0060 v gs = 10 v i d = 30 a, t j = 125 c - - 0.0104 v gs = 10 v i d = 30 a, t j = 175 c - - 0.0129 forward transconductance b g fs v ds = 15 v, i d = 30 a - 94 - s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 5196 6495 pf output capacitance c oss - 708 885 reverse transfer capacitance c rss - 336 420 total gate charge c q g v gs = 10 v v ds = 30 v, i d = 75 a -96.5145 nc gate-source charge c q gs -24.6- gate-drain charge c q gd -27.2- gate resistance r g f = 1 mhz 0.3 1 1.7 turn-on delay time c t d(on) v dd = 30 v, r l = 0.4 i d ? 75 a, v gen = 10 v, r g = 1 -1624 ns rise time c t r -1421 turn-off delay time c t d(off) -3451 fall time c t f -914 source-drain diode ratings and characteristics b pulsed current a i sm --480a forward voltage v sd i f = 75 a, v gs = 0 - 0.9 1.5 v
sqp120n06-06 www.vishay.com vishay siliconix s15-1876-rev. b, 10-aug-15 3 document number: 62853 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 25 50 75 100 125 150 175 200 225 0 4 8 12 16 20 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 7 v v gs = 6 v v gs = 5 v 0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = -55 c t c = 125 c 0.000 0.004 0.008 0.012 0.016 0.020 0 20 40 60 80 100 120 r d s (on) -on-re s i s tance () i d - drain current (a) v gs gs - g ate-to- s ource voltage (v) t c = -55 c t c = 125 c t c = 25 c 0 40 80 120 160 200 0 1428425670 g f s -tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = -55 c t c = 25 c 0 2000 4000 6000 8000 10 000 0 10 20 30 40 50 60 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss
sqp120n06-06 www.vishay.com vishay siliconix s15-1876-rev. b, 10-aug-15 4 document number: 62853 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 20 40 60 80 100 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) i d = 110 a v d s s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c -1.8 -1.4 -1.0 -0.6 -0.2 0.2 0.6 -50 -25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j -temperature ( c) i d = 250 a i d = 5 ma 0.6 0.9 1.2 1.5 1.8 2.1 -50 -25 0 25 50 75 100 125 150 175 r d s (on) -on-re s i s tance (normalized) t j - junction temperature ( c) i d = 10 a v gs s (on) -on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 65 68 71 74 77 80 -50 -25 0 25 50 75 100 125 150 175 v d s -drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 10 ma
sqp120n06-06 www.vishay.com vishay siliconix s15-1876-rev. b, 10-aug-15 5 document number: 62853 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s ( on ) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 100 m s , 1 s , 10 s , d c 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 1 0.01 0.001 0.1 0.0001 sq uare wave pul s e duration ( s ) normalized effective tran s ient thermal impedance
sqp120n06-06 www.vishay.com vishay siliconix s15-1876-rev. b, 10-aug-15 6 document number: 62853 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal impedance junction-to-case (25 c) are given for general guidelines only to enable the user to ge t a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62853 . 10 -3 10 -2 0 1 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) n ormalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02
sqp120n06-06 www.vishay.com vishay siliconix s15-1876-rev. b, 10-aug-15 7 document number: 62853 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note a. as of april 2014 revision history a revision date description of change b 04-aug-15 ? revised r g minimum limit
ordering information www.vishay.com vishay siliconix revision: 25-aug-15 1 document number: 67167 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220 ordering codes for the sq rugged series power mosfets in the to-220 package: note a. old ordering code is obsolete and no longer valid for new orders datasheet part number o ld ordering code a new ordering code sqp100p06-9m3l - sqp100p06-9m3l_ge3 sqp120n06-06 - sqp120n06-06_ge3 sqp120n06-3m5l sqp120n06-3m5l-ge3 sqp120n06-3m5l_ge3 sqp120n10-09 sqp120n10-09-ge3 sqp120n10-09_ge3 sqp120n10-3m8 sqp120n10-3m8-ge3 sqp120n10-3m8_ge3 sqp25n15-52 - sqp25n15-52_ge3 sqp50n06-09l sqp50n06-09l-ge3 sqp50n06-09l_ge3 sqp50p03-07 sqp50p03-07-ge3 sqp50p03-07_ge3 sqp60n06-15 sqp60n06-15-ge3 sqp60n06-15_ge3 sqp90p06-07l sqp90p06-07l-ge3 sqp90p06-07l_ge3
package information www.vishay.com vishay siliconix revison: 16-jun-14 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c d2 millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 d2 12.19 12.70 0.480 0.500 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: t14-0413-rev. p, 16-jun-14 dwg: 5471
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